The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 17, 2004
Filed:
Jan. 03, 2001
Richard Hsiao, San Jose, CA (US);
Son Van Nguyen, Los Gatos, CA (US);
Thao Pham, San Jose, CA (US);
Eugene Zhao, San Jose, CA (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
The method for controlling the depth of polishing during a CMP process involves the deposition of a polishing stop layer at an appropriate point in the device fabrication process. The stop layer is comprised of a substance that is substantially more resistant to polishing with a particular polishing slurry that is utilized in the CMP process than a polishable material layer. Preferred stop layer materials of the present invention are tantalum and diamond-like carbon (DLC), and the polishable layer may consist of alumina. In one embodiment of the present invention the stop layer is deposited directly onto the top surface of components to be protected during the CMP process. A polishable layer is thereafter deposited upon the stop layer, and the CMP polishing step removes the polishable material layer down to the portions of the stop layer that are deposited upon the top surfaces of the components. The stop layer is thereafter removed from the top surface of the components. In this embodiment, the fabricated height of the components is preserved.