The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 17, 2004

Filed:

Jul. 26, 2002
Applicant:
Inventors:

Shih-Hsien Yang, Hsinchu, TW;

Yueh-Cheng Chuang, Hsinchu, TW;

Bor-Ru Sheu, Hsinchu, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H05K 1/00 ; H01R 1/200 ;
U.S. Cl.
CPC ...
H05K 1/00 ; H01R 1/200 ;
Abstract

A conductive contact structure to electrically connect to a source/drain region in a semiconductor substrate and a process of making the same. An inlay opening including a pad opening and a bottom opening is formed in the dielectric layer on the semiconductor substrate. The pad opening is larger than and located upon the bottom opening that exposes the source/drain region. The bottom opening and pad opening are sequentially filled with a polysilicon layer and a tungsten layer to form a bottom plug and a metal pad layer, respectively.


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