The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 10, 2004
Filed:
Mar. 21, 2003
Kazuhiko Kurafuchi, Tsukuba, JP;
Naoya Suzuki, Tsukuba, JP;
Masaaki Yasuda, Tsukuba, JP;
Tatsuo Kawata, Yuki, JP;
Hiroyuki Sakai, Yuki, JP;
Masao Kawasumi, Hitachi, JP;
Hitachi Chemical Co., Ltd., Tokyo, JP;
Abstract
A resin-sealed semiconductor device which comprises a lead frame having a die bond pad and an inner lead, a semiconductor chip installed on the die bond pad via a die bonding material and a sealing material for sealing the semiconductor chip and the lead frame, wherein properties of the die bonding material and the sealing material after curing satisfies the following formulae: &sgr;e≦0.2×&sgr;b formula (1) Ui≧2.0×10 ×&sgr;ei formula (2) Ud≧4.69×10 ×ed formula (3) wherein &sgr;b (MPa)represents the flexural strength at break of the sealing material at 25°, Ui (N·m) and Ud (N·m) represent shear strain energies of the sealing material at a soldering temperature for the inner lead and the die bonding pad, respectively, at a peak temperature during soldering, where &sgr;e=(1/log(kd ))×Ee ×(&agr;m−&agr;e )×&Dgr;T formula (4), &sgr;ei=Ee ×(&agr;e −&agr;m)×&Dgr;T formula (5), &sgr;ed=log(kd )×Ee ×(&agr;e −&agr;m)×&Dgr;T Formula (6), kd : a ratio of the flexural elastic modulus Ed (MPa) of the die bonding material at 25° to 1 MPa of elastic modulus (Ed >1 MPa), kd : a ratio of the flexural elastic modulus Ed (MPa) of the die bonding material at the peak temperature during the soldering to 1 MPa of elastic modulus (Ed >1 MPa), Ee : a flexural modulus (MPa) of the sealing material at 25°, Ee : a flexural modulus (MPa) of the sealing material at the peak temperature during soldering, &agr;e : an average thermal expansion coefficient (1/° C.) of the sealing material from forming temperature for the semiconductor to room temperature (25° C.), &agr;e : an average thermal expansion coefficient (1/° C.) of the sealing material from the forming temperature for the semiconductor to a peak temperature during soldering, &agr;m: a thermal expansion coefficient (1/° C.) of the lead frame, &Dgr;T : the difference (° C.) between the forming temperature for the semiconductor and the low temperature side temperature in the temperature cycle, and &Dgr;T : the difference (° C.) between the forming temperature for the semiconductor and the peak temperature during soldering.