The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 10, 2004

Filed:

Oct. 22, 2001
Applicant:
Inventors:

Wen-Kuei Huang, Hsinchu, TW;

Hsi-Chuan Chen, Hsinchu, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/352 ;
U.S. Cl.
CPC ...
H01L 2/352 ;
Abstract

Low leakage and low resistance plugs for a memory device and the manufacturing method for the plugs includes a doped polysilicon layer first deposited at contact nodes and bit-line contacts inside the memory to form a low leakage interface. A low contact resistance imbedded tungsten plug is subsequently deposited on the polysilicon layer to form a low contact resistance imbedded tungsten plug in concavities at the contact nodes and bit-line contacts. Excess material is etched to leave double layer plugs at the contact nodes and bit-line contacts that constitute low leakage and low contact resistance memory plugs.


Find Patent Forward Citations

Huang, Wen-Kuei. (2004). Low leakage and low resistance for memory and the manufacturing method for the plugs (U.S. Patent No. 6774488). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6774488

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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