Semiconductor device and cmos transistor

Abstract

Provided are a semiconductor device comprising a polymetal gate electrode that can prevent formation of a silicide layer at the interface between metal and conductive silicon and also exhibit low resistance property and ohmic property, and a method for manufacturing the same. Specifically, a polymetal gate electrode is formed via a gate insulating film ( ), e.g., an oxide film, on a semiconductor substrate ( ), e.g., a silicon substrate. The polymetal gate electrode has such a structure that a conductive silicon film ( ), e.g., a poly-Si film, a silicide film ( ), e.g., a WSi film, a barrier film ( ), e.g., a WSiN film, and a metal film ( ), e.g., a W film, are stacked over the semiconductor substrate ( ) in the order named.