The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 10, 2004
Filed:
Sep. 07, 2003
Applicant:
Inventors:
Yi-Nan Su, Taipei Hsien, TW;
Nathan Sun, Taipei Hsien, TW;
Assignee:
United Microeletronics Corp, Hsin-Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/176 ;
U.S. Cl.
CPC ...
H01L 2/176 ;
Abstract
The present invention studs oxide dielectric into trench capacitor top recesses after the formation of the trench capacitor structures. A thin (500 Å) cap buffer nitride is then deposited over the substrate. The studded dielectric and the collar oxide protect the trench capacitors during the subsequent selective dry etching, thereby forming isolation trenches having an approximately T-shaped cross section between the trench capacitors within the memory array area of the semiconductor chip.