Methods of forming capacitors

Abstract

Capacitors and methods of forming capacitors are disclosed. In one implementation, a capacitor comprises a capacitor dielectric layer comprising Ta O formed over a first capacitor electrode. A second capacitor electrode is formed over the Ta O capacitor dielectric layer. Preferably, at least a portion of the second capacitor electrode is formed over and in contact with the Ta O in an oxygen containing environment at a temperature of at least about 175° C. Chemical vapor deposition is one example forming method. The preferred second capacitor electrode comprises a conductive metal oxide. A more preferred second capacitor electrode comprises a conductive silicon comprising layer, over a conductive titanium comprising layer, over a conductive metal oxide layer. A preferred first capacitor electrode comprises a conductively doped Si—Ge alloy. Preferably, a Si N layer is formed over the first capacitor electrode. DRAM cells and methods of forming DRAM cells are disclosed.