The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 03, 2004
Filed:
Nov. 27, 2002
Applicant:
Inventors:
Brian S. Lee, Hsinchu, TW;
John Walsh, Hsinchu, TW;
Assignee:
Promos Technologies Inc., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 3/1117 ;
U.S. Cl.
CPC ...
H01L 3/1117 ;
Abstract
The present invention provides a semiconductor device in which a low resistance, tunable contact is formed by means of using a Si Ge (0<x<1) layer. Thus, only moderate doping is required, which in turn protects the device from short channel effect and leakage. The low resistance, tunable contact is suitable for CMOS devices.