The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 03, 2004
Filed:
Apr. 03, 2003
Chih-Wei Hung, Hsin-chu, TW;
Min-San Huang, Hsinchu, TW;
Powerchip Semiconductor Corp., Hsinchu, TW;
Abstract
A flash memory device structure is provided. The flash memory device consists of a P-type substrate with an opening, a deep N-well region in the P-type substrate, a first gate structure and a second gate structure on the respective sidewalls of the opening, an insulating layer in the space between the first gate structure and the second gate structure, a source region in the P-type substrate at the bottom section of the opening, a drain region in the P-type substrate at the top section of the opening, a P-well region in the deep N-well region such that the junction between the P-well and the deep N-well region is at a level higher than the bottom section of the opening and a P-type pocket doping region in the P-type substrate on the sidewalls of the opening such that the P-type pocket doping region connects the P-well region with the source region.