The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 03, 2004
Filed:
Mar. 10, 2003
Applicant:
Inventors:
Assignee:
Infineon Technologies AG, Munich, DE;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/18242 ;
U.S. Cl.
CPC ...
H01L 2/18242 ;
Abstract
The method for producing a shallow trench isolation for n- and p-channel field-effect transistors in a semiconductor module provides the following steps. A thermal oxide layer is applied in isolation trenches. A nitride liner is subsequently applied. In a further step, a mask is applied in the region in which n-channel field-effect transistors are intended to be produced. The nitride liner is removed around the mask. Finally, the mask is also removed. As a result, the properties of the n-channel field-effect transistors are improved, without impairing the properties of the p-channel field-effect transistors.