The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 03, 2004
Filed:
Dec. 10, 2002
Mehrdad Mahanpour, Union City, CA (US);
Mohammad Masoodi, Los Altos, CA (US);
Bryan M. Tracy, Oakland, CA (US);
Advanced Micro Devices, Inc., Sunnyvale, CA (US);
Abstract
A method and system for performing failure analysis on a silicon on insulator (SOI) semiconductor device is disclosed. The SOI device includes a plurality of conductive structures in a silicon region. The silicon resides on a box insulator, which resides on a silicon substrate. The method and system include providing a cross-section of the SOI semiconductor device. The cross-section of the SOI semiconductor device includes a portion of the plurality of conductive structures. The method and system also include staining the cross-section of the SOI semiconductor device using a stain. The stain etches the silicon region in the SOI semiconductor device without etching a remaining portion of the SOI semiconductor device not composed of silicon.