The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 03, 2004
Filed:
Mar. 07, 2001
Applicant:
Inventors:
Robert Antaki, St. Luc, CA;
Riopel Yan, Bromont, CA;
Assignee:
Dalsa Semiconductor Inc., Waterloo, CA;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G01L 2/130 ;
U.S. Cl.
CPC ...
G01L 2/130 ;
Abstract
A method is disclosed for evaluating an anisotropic etch in a microstructure. First a film is formed on a substrate. Next a series of holes of progressively different area and having specific geometric shapes are formed through the film. An anisotropic etch is carried out in the microstructure through the holes by relying on different etch rates in different crystal planes under known and reproducible conditions. Finally, the microstructure is inspected through the holes after the anisotropic etch to compare results from holes of different area. The method is useful in the determination of etch depth.