The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 03, 2004

Filed:

Jan. 14, 2002
Applicant:
Inventors:

Shih-Feng Huang, Daun Chin, TW;

Chih-Feng Huang, Chu-Pei, TW;

Kuo-Su Huang, Hsin-Chu, TW;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C30B 3/500 ; H01L 2/358 ; G01N 3/300 ;
U.S. Cl.
CPC ...
C30B 3/500 ; H01L 2/358 ; G01N 3/300 ;
Abstract

A pattern for monitoring epitaxial layer washout is disclosed. The pattern includes first and second sub-patterns. The first sub-pattern has a shape and defines one or more minimum dimensions. Obfuscation of the first sub-pattern means that epitaxial washout has occurred at least for dimensions equal to or less than the minimum dimensions. The second sub-pattern has the same shape of the first sub-pattern, but defines one or more maximum dimensions. Obfuscation of the second sub-pattern means that epitaxial washout has occurred for dimensions equal to or less than the maximum dimensions. The sub-patterns can include a pair of separated features, such as a pair of interlocking but separated L-shaped features, the separation of which defines the dimensions of the sub-patterns.


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