The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 27, 2004

Filed:

Aug. 11, 2003
Applicant:
Inventor:

Chung-Meng Huang, Hsinchu, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 1/604 ;
U.S. Cl.
CPC ...
G11C 1/604 ;
Abstract

The present invention provides a stack-gate flash memory array. In the present invention, one bit line for a conventional memory cell had been divided two independent bit lines; two word lines have been combined together via the gate terminal of an isolated transistor. Because the bit lines are divided and the word lines will stop the leakage current via the isolated transistor, the leakage current would not affect the other memory cells. Hence, the present invention can avoid the data inaccuracy due to the leakage current resulting from the erratic bits, and thus can extend the flash memory's lifetime.


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