The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 27, 2004
Filed:
Jul. 15, 2003
Applicant:
Inventors:
Assignee:
Matsushita Electric Industrial Co., Ltd., Osaka, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/348 ;
U.S. Cl.
CPC ...
H01L 2/348 ;
Abstract
In a semiconductor device according to the present invention, an n-type MISFET including a semiconductor substrate , a source region , a drain region and a gate electrode is provided. On the semiconductor substrate , a first interlevel insulating film covering the MISFET , a second interlevel insulating film and third interlevel insulating film are provided. On the first interlevel insulating film , a first gate interconnect for electrically connecting a gate electrode and the outside, a first drain interconnect for electrically connecting the drain region and the outside are provided so as to face each other with part of a second interlevel insulating film interposed therebetween.