The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 27, 2004

Filed:

May. 21, 2003
Applicant:
Inventors:

Tatsuji Nagaoka, Nagano, JP;

Tatsuhiko Fujihira, Nagano, JP;

Yasuhiko Onishi, Nagano, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/976 ; H01L 2/1336 ;
U.S. Cl.
CPC ...
H01L 2/976 ; H01L 2/1336 ;
Abstract

A MIS semiconductor device has a greatly improved relation between the on-resistance and the switching time by forming trench completely through a p base region and positioning the trench adjacent to a gate electrode, and then implanting n-type impurity ions using the gate electrode as a mask to form a second drain region, which also serves as a drift region.


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