The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 27, 2004
Filed:
Aug. 05, 2003
Ko-Hsing Chang, Hsinchu, TW;
Hann-Jye Hsu, Taichung Hsien, TW;
Powerchip Semiconductor Corp., Hsinchu, TW;
Abstract
A split gate flash memory cell includes a substrate having a trench, a stack structure disposed on the substrate, wherein the stack structure includes a tunneling dielectric layer, a floating gate and a cap layer; a first inter-gate dielectric layer and a second inter-gate dielectric layer disposed on the sidewalls of the stack structure, wherein the first inter-gate dielectric layer is contiguous to the top of the trench; a selective gate disposed on the sidwalls of the first inter-gate dielectric layer and the trench; a selective gate dielectric layer disposed between the selective gate and the substrate; a source region configured in the substrate beside the side of the stack structure with the second inter-gate dielectric layer; and a drain region configured at the bottom of the trench beside one side of the selective gate.