The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 27, 2004
Filed:
Jan. 17, 2003
Applicant:
Inventor:
Naoki Kasai, Tokyo, JP;
Assignee:
NEC Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/976 ; H01L 2/9108 ;
U.S. Cl.
CPC ...
H01L 2/976 ; H01L 2/9108 ;
Abstract
In a method of manufacturing a semiconductor memory device, a lower electrode film is formed on a semiconductor substrate via an interlayer insulating film. A ferroelectric film is formed on the lower electrode layer while heating the lower electrode layer uniformly in the cell array region. An upper electrode film is formed on the ferroelectric film. Ferroelectric capacitors are formed in a memory cell array region. Each of the ferroelectric capacitors includes the lower electrode film, the ferroelectric film and the upper electrode film.
Kasai, Naoki. (2004). Semiconductor memory device with memory cells having same characteristics and manufacturing method for the same (U.S. Patent No. 6768151). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6768151
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile