The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 27, 2004
Filed:
Mar. 05, 2003
Applicant:
Inventors:
Yu-Chi Sun, Taoyuan, TW;
Tse-Yao Huang, Taipei, TW;
Assignee:
Nanya Technology Corporation, Taoyuan, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/1302 ;
U.S. Cl.
CPC ...
H01L 2/1302 ;
Abstract
A method of inter-layer dielectric (ILD) or inter-metal dielectric (IMD) planarization. Reactive ion etching (RIE) is performed with gases including equal amounts of C F and CHF , and argon diluent gas. The ratio of the gas is precisely controlled in the etching, and once the oxygen concentration drops, the etching process enters deposition of the protection layer, and when oxygen concentration drops to a minimum level, the etch-back process stops automatically. Higher ILD or IMD uniformity is achieved compared with conventional CMP process.