The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 27, 2004
Filed:
Jul. 17, 2002
Kiyoteru Kobayashi, Tokyo, JP;
Renesas Technology Corp., Tokyo, JP;
Abstract
A nonvolatile semiconductor storage device can achieve a shortened write time and a reduced absolute value of an operating voltage at the time of erasing. A P-type silicon substrate ( ) is set at a ground level, a control gate ( ) is set at a high voltage (Vp ), and a voltage of 0 V is applied to an access gate line connected in common to all access gates ( ) to set all the access gates ( ( −4) to ( +3)) at 0 V. When the threshold voltage of a memory transistor (MT(n)) is set into a written state, an N diffusion region ( ( )) is set at 0V. This causes tunnel injection of electrons into a floating gate ( ( )) of the memory transistor (MT(n)) and thereby allows the memory transistor MT(n) to be set to a high threshold voltage (Vthp) without being influenced by the contents of writing to adjacent memory transistors.