The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 27, 2004
Filed:
Jul. 12, 2002
Jeffrey B. Casady, Starkville, MS (US);
Geoffrey E. Carter, Saltillo, MS (US);
Yaroslav Koshka, Starkville, MS (US);
Michael S. Mazzola, Starkville, MS (US);
Igor Sankin, Starkville, MS (US);
Mississippi State University-Research and Technology Corporation (RTC), Mississippi State, MS (US);
Abstract
A method of making vertical diodes and transistors in SiC is provided. The method according to the invention uses a mask (e.g., a mask that has been previously used for etching features into the device) for selective epitaxial growth or selective ion implantation. In this manner, the gate and base regions of static induction transistors and bipolar junction transistors can be formed in a self-aligned process. A method of making planar diodes and planar edge termination structures (e.g., guard rings) is also provided.