The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 20, 2004
Filed:
Dec. 10, 2002
Chuan Cheah, Redondo Beach, CA (US);
Bharat Shivkumar, Redondo Beach, CA (US);
International Rectifier Corporation, El Segundo, CA (US);
Abstract
A power semiconductor package, comprising: a power MOSFET die having a bottom surface with a bottom electrode disposed for contacting a conductor on a support board, and having a top surface with a top electrode; a bump strap which bridges over the power MOSFET die, having mounting portions disposed respectively on opposite sides of the power MOSFET die and disposed for mounting on the support board, and a central portion which engages and is conductively connected to the top electrode of the power MOSFET die. The bottom electrode comprises at least one of a drain electrode and a gate electrode, and the top electrode comprises a source electrode. The bump strap extends upward from the mounting portions to define a respective pair of upper portions of the bump strap which are disposed above the power MOSFET die, the central portion of the bump strap being disposed lower than the upper portions so as to be adjacent to the top electrode of the power MOSFET die.