The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 20, 2004
Filed:
Apr. 25, 2002
Hidetaka Natsume, Tokyo, JP;
NEC Electronics Corporation, Kanagawa, JP;
Abstract
A semiconductor device has a gate electrode which is formed on a first conductive-type well set in semiconductor substrate, with a gate insulating film lying therebetween; a LDD structure in which, on either side of said gate electrode, there are formed a LDD region and a source/drain region; an interlayer insulating film to cover said gate electrode as well as said LDD regions; and contact sections. A contact section connecting to one side of the source/drain regions having a potential equal to a potential of said first conductive-type well is disposed so as to come into contact with the LDD region lying thereunder; and a contact section connecting to the other side of the source/drain region having a potential different from the potential of said first conductive-type well is disposed so as not to come into contact with the LDD region lying thereunder. The present invention can develop technology capable to reduce the memory cell area while suppressing the generation of the leakage, and provide a semiconductor memory device of high integration with excellent element characteristics having a low standby current.