The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 20, 2004
Filed:
Feb. 24, 2003
Masahiko Takeuchi, Hyogo, JP;
Takashi Dokan, Hyogo, JP;
Renesas Technology Corp., Tokyo, JP;
Abstract
A semiconductor device includes: lower storage node electrodes provided on a main surface of a silicon substrate; a dielectric film provided on the lower storage node electrodes; an upper cell plate electrode provided on the dielectric film; and an interlayer insulating film covering the upper cell plate electrode. The upper cell plate electrode contains ruthenium. The interlayer insulating film has a contact hole reaching the upper cell plate electrode. The contact hole is provided so that the distance between the main surface of the silicon substrate and the bottom face of the contact hole is not less than the distance between the main surface of the silicon substrate and the bottom face of the upper cell plate electrode. A semiconductor device is provided wherein contact defects in the upper electrode and the generation of an area penalty are prevented.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile