The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 20, 2004
Filed:
Apr. 09, 2003
Applicant:
Inventors:
Trung T. Doan, Boise, ID (US);
Roger Lee, Boise, ID (US);
Dennis Keller, Boise, ID (US);
Gurtej Sandhu, Boise, ID (US);
Ren Earl, Meridian, ID (US);
Assignee:
Micron Technology, Inc., Boise, ID (US);
Primary Examiner:
Int. Cl.
CPC ...
H01L 3/1119 ;
U.S. Cl.
CPC ...
H01L 3/1119 ;
Abstract
This invention pertains to a method of fabricating a trenchless MRAM structure and to the resultant MRAM structure. The MRAM structure of the invention has a pinned layer formed within protective sidewalls formed over a substrate. The protective sidewalls facilitate formation of the MRAM structure by a self-aligning process.
Doan, Trung. (2004). Self-aligned, trenchless mangetoresitive random-access memory (mram) structure with sidewall containment of mram structure (U.S. Patent No. 6765250). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6765250
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile