The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 20, 2004
Filed:
Apr. 04, 2002
Applicant:
Inventors:
Bin Yu, Cupertino, CA (US);
William G. En, Milpitas, CA (US);
Judy Xilin An, San Jose, CA (US);
Concetta E. Riccobene, Mountain View, CA (US);
Assignee:
Advanced Micro Devices, Inc., Sunnyvale, CA (US);
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/906 ;
U.S. Cl.
CPC ...
H01L 2/906 ;
Abstract
A semiconductor-on-insulator (SOI) wafer. The wafer includes a silicon substrate, a buried oxide (BOX) layer disposed on the substrate, and an active layer disposed on the box layer. The active layer has an upper silicon layer disposed on a silicon-germanium layer. The silicon-germanium layer is disposed on a lower silicon layer. The silicon-germanium of the silicon-germanium layer is strained silicon-germanium and is about 200 Å to about 400 Å thick.