The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 20, 2004
Filed:
Oct. 05, 2002
Applicant:
Inventors:
Vincent Pai, Hsin-Chu, TW;
Kuo-Chi Tu, Hsin-Chu, TW;
Chung-Wei Chang, Hsin-Chu, TW;
Chia-Shiung Tsai, Hsin-Chu, TW;
Chun-Yao Chen, Hsin-Chu, TW;
Assignee:
Taiwan SEmiconductor Manufacturing Co., Ltd., Hsin Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/131 ; H01L 2/1469 ;
U.S. Cl.
CPC ...
H01L 2/131 ; H01L 2/1469 ;
Abstract
A method for forming a silicon dioxide layer over a silicon substrate including providing a substrate having exposed silicon portions; and, forming a silicon dioxide layer over the exposed silicon portions according to an oxide formation process including contacting the exposed silicon portions with an oxidizing solution comprising water and ozone.