The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 20, 2004
Filed:
Jul. 31, 2003
Masahiro Imade, Osaka, JP;
Hiroyuki Umimoto, Hyogo, JP;
Matsushita Electric Industrial Co., Ltd., Osaka, JP;
Abstract
A semiconductor device of the present invention includes a MISFET provided in an element formation region Re of a semiconductor substrate and a trench isolation surrounding the sides of the element formation region Re. An oxygen-passage-suppression film is provided from the top of the trench isolation to the top of a portion of the element formation region Re adjacent to the trench isolation . The oxygen-passage-suppression film is made of a silicon nitride film or the like through which oxygen is less likely to permeate. Therefore, since it becomes hard that the upper edge of the element formation region Re of the semiconductor substrate is oxidized, an expansion of the volume of the upper edge is suppressed, thereby reducing a stress.