The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 20, 2004
Filed:
Sep. 19, 2002
Tomonori Okudaira, Tokyo, JP;
Renesas Technology Corp., Tokyo, JP;
Abstract
Sputter etching of silicon oxide films is performed with an etching gas such as C F . Since a silicon nitride film is little etched at this time, when the etching is performed under a condition of sufficient overetching for the silicon oxide films, the silicon nitride film serves as an etching stopper, and the silicon oxide film on a platinum film and the silicon oxide film other than a portion below the platinum film are completely removed and the silicon oxide film remains only below the platinum film, to form a protrusion of a layer consisting of the silicon oxide film and the platinum film from a surface of the silicon nitride film. Thus, in patterning, a capacitor lower electrode by chemical etching, a nonuniform etching caused by temperature distribution on a substrate or among a plurality of substrates can be solved.