The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 13, 2004
Filed:
Apr. 14, 2003
Applicant:
Inventors:
Fuh-Cheng Jong, Tainan, TW;
Kent Kuohua Chang, Taipei, TW;
Assignee:
Macronix International Co., Ltd., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/9792 ;
U.S. Cl.
CPC ...
H01L 2/9792 ;
Abstract
A nonvolatile memory cell for prevention from second bit effect comprises a pair of source/drain regions arranged with a channel therebetween, a programmable layer above the channel, and a gate conductor above the programmable layer. The memory cell is characterized in that the programmable layer has a maximum width substantially larger than the boundary widths between the programmable layer and the source/drain regions. The programmable layer comprises a trapping dielectric layer inserted between two insulator layers, and the trapping dielectric preferably comprises a nitride or an oxide having buried polysilicon islands.