The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 13, 2004
Filed:
Jun. 09, 2001
Applicant:
Inventor:
Hyeon-Seag Kim, San Jose, CA (US);
Assignee:
Advanced Micro Devices, Inc., Sunnyvale, CA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/994 ; H01L 3/1119 ;
U.S. Cl.
CPC ...
H01L 2/994 ; H01L 3/1119 ;
Abstract
In accordance with the invention, a MOSFET includes a well, a channel formed in the well, a high K layer overlying the channel, a buffer layer overlying the high k layer, a gate overlaying the buffer layer, a blocking layer overlying the gate and two source/drain regions. In some embodiments the gate and the source/drain regions are silicon germanium.
Kim, Hyeon-Seag. (2004). Mosfet with sige source/drain regions and epitaxial gate dielectric (U.S. Patent No. 6762463). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6762463
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile