The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 13, 2004
Filed:
Dec. 31, 2001
Seungmoo Choi, Orlando, FL (US);
Donald Thomas Cwynar, Orlando, FL (US);
Scott Francis Shive, Orlando, FL (US);
Timothy Edward Doyle, Orlando, FL (US);
Felix Llevada, Orlando, FL (US);
Agere Systems Inc., Allentown, PA (US);
Abstract
A halo implant ( ) for an MOS transistor ( ) is formed in a semiconductor substrate ( ) at a shallow implant angle, relative to normal to the substrate surface ( ). A polysilicon gate structure ( ) is formed over a gate oxide ( ) and then a hard mask ( ), such as a TEOS-generated layer of silicon oxide, is deposited on an upper surface ( ) of the gate. The mask is etched with a blanket anisotropic etch to form a cap-shaped mask ( ). The shape of the cap causes the dopant for the halo implant to penetrate to a depth which follows the contour of the cap. Thus, halo implants may be formed which extend under the gate structure without the need for large angle implants and resultant shadowing problems caused by adjacent devices.