The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 13, 2004
Filed:
Apr. 08, 2002
Applicant:
Inventors:
Effiong Ibok, Sunnyvale, CA (US);
Joong S. Jeon, Cupertino, CA (US);
Arvind Halliyal, Cupertino, CA (US);
Minh Van Ngo, Fremont, CA (US);
Assignee:
Advanced Micro Devices, Inc., Sunnyvale, CA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/976 ; H01L 2/9788 ; H01L 2/9792 ;
U.S. Cl.
CPC ...
H01L 2/976 ; H01L 2/9788 ; H01L 2/9792 ;
Abstract
A semiconductor device formed on a semiconductor substrate having an active region and a method of making the same is disclosed. The semiconductor device includes a stacked polysilicon layer formed on a dielectric layer. The stacked polysilicon layer inhibits the diffusion of boron in the dielectric layer and the penetration of boron into the dielectric layer and the semiconductor substrate.
Ibok, Effiong. (2004). Stacked polysilicon layer for boron penetration inhibition (U.S. Patent No. 6762454). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6762454
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile