The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 13, 2004

Filed:

Feb. 20, 2002
Applicant:
Inventors:

Vito Raineri, Mascalucia, IT;

Mario Saggio, Aci Castello, IT;

Assignee:

STMicroelectronics S.r.l., Agrate Brianza, IT;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/176 ;
U.S. Cl.
CPC ...
H01L 2/176 ;
Abstract

A method for forming isolating structures in a silicon carbide layer includes depositing a masking layer on first and second portions of the silicon carbide layer, and forming openings through the masking layer to expose the first portions of the silicon carbide layer. Ions are implanted into the first portions of the silicon carbide layer. The silicon carbide layer is heated to form an oxide layer thereon having first portions on the first portions of the silicon carbide layer, and having second portions on the second portions of the silicon carbide layer. The first portions of the oxide layer are etched to form isolating regions in the silicon carbide layer.


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