The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 13, 2004
Filed:
Oct. 14, 2003
Yasuichi Masuda, Tokyo, JP;
Renesas Technology Corp., Tokyo, JP;
Abstract
A method of manufacturing a semiconductor device having a capacitor is obtained that improves adhesiveness between an interlayer dielectric film and a capacitor lower electrode without providing a liner material. A bottom surface of a through hole ( ) and a side surface of the lower portion thereof are defined by silicon nitride films ( ) and ( ). The silicon nitride film ( ) is formed on a silicon oxide film ( ). An upper end of a contact plug ( ) protrudes from the bottom surface of the through hole ( ). A tungsten film ( ) is formed on a silicon oxide film ( ), and a ruthenium film ( ) is formed on the tungsten film ( ). A portion of the silicon oxide film ( ) that defines the side surface of the through hole ( ) is nitrided, thereby forming a modified layer ( ) in the side surface of the silicon oxide film ( ). The ruthenium film ( ) is directly formed on the side surface and the bottom surface of the through hole ( ), so that no liner material is interposed.