The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 06, 2004
Filed:
Nov. 24, 2003
Applicant:
Inventors:
Yu-Min Hsu, Hsinchu, TW;
Jin-Wei Shi, Hsinchu, TW;
Zing-Way Pei, Hsinchu, TW;
Fon Yuan, Hsinchu, TW;
Chee-Wee Liu, Hsinchu, TW;
Assignee:
Industrial Technology Research Institute, Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 3/111 ;
U.S. Cl.
CPC ...
H01L 3/111 ;
Abstract
A phototransistor structure is disclosed. A sidewall is grown on the collector side and under the base. The surface of the sidewall is formed with a sidewall contact. When the contact is connected to an external voltage, the holes accumulated at the junction of the base and emitter can be quickly removed. This solves the problem in the prior art that using a bias between the base and the emitter to remove holes usually results in a large dark current (bias current), power consumption, and diminishing optoelectronic conversion gain.