The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 06, 2004
Filed:
Apr. 28, 2003
Applicant:
Inventors:
Assignee:
Nanya Technology Corporation, Taoyuan, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/18247 ;
U.S. Cl.
CPC ...
H01L 2/18247 ;
Abstract
A method for fabricating a floating gate. A semiconductor substrate is provided, on which a gate dielectric layer, a conductive layer, a first insulating layer, and a patterned mask layer with an opening are formed, such that the opening exposes the first insulating layer. The insulating layer and the conducting layer are sequentially etched to form a round-cornered trench, and the photo hard mask layer is removed. A second insulating layer is formed in the round-cornered trench. The first insulating layer and the exposed conducting layer are removed using the second insulating layer as a mask, and the first conducting layer covered by the second insulating layer remains as a floating gate.