The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 06, 2004
Filed:
Dec. 18, 2002
Applicant:
Inventors:
Assignee:
Hynix Semiconductor Inc., Kyungki-Do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/18247 ;
U.S. Cl.
CPC ...
H01L 2/18247 ;
Abstract
The present invention relates to a method of manufacturing a flash memory device. In the method, a low-voltage transistor is formed to have a DDD structure same to a high-voltage transistor when a peripheral region is formed in the manufacture process of the flash memory device. As the process for forming the LDD structure for the low voltage is omitted, the cost is reduced in the entire process of manufacturing the flash memory device. Also, as the junction breakdown voltage of the low-voltage transistor is increased and current is increased, the device characteristics is improved