The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 06, 2004
Filed:
Jan. 11, 2002
Franklin Dean Kalk, Austin, TX (US);
DuPont Photomasks, Inc., Round Rock, TX (US);
Abstract
The present disclosure includes describes a method for fabricating an AAPS photomask with improved intensity balance. The method includes forming an alternating aperture phase shifting photomask pattern on a substrate, including forming trenches within the substrate. The method further includes forming a layer of antireflective material within the bottom of at least one trench. In one embodiment the layer antireflective material is Magnesium Fluoride (MgF2) formed using a vacuum evaporation technique. The layer of antireflective material formed at the bottom of the trench areas increases the transmission of light through the trench areas by improving light coupling into the trench.