The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 29, 2004
Filed:
Mar. 12, 2003
United Microelectronics Corp., Hsinchu, TW;
Abstract
A method for operating a non-volatile memory device, which is applicable to an n-channel non-volatile memory device, wherein a positive voltage is applied to the control gate, a negative voltage is applied to the drain region while the source region is floating. Furthermore, a negative voltage is applied to the substrate to program to the n-channel memory device by the channel Fowler-Nordheim tunneling effect. To erase the n-channel non-volatile memory device, a negative voltage is applied to the control gate, a positive voltage is applied to the drain region, and the source region is floating. Moreover, a positive voltage is applied to the substrate to erase the n-channel memory device using the channel Fowler-Nordheim tunneling effect.