The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 29, 2004
Filed:
May. 14, 2002
Akira Doi, Chiyoda-machi, JP;
Ken Yoshioka, Hikari, JP;
Manabu Edamura, Chiyoda-machi, JP;
Hideyuki Kazumi, Hitachi, JP;
Saburou Kanai, Hikari, JP;
Tsutomu Tetsuka, Chiyoda-machi, JP;
Masatsugu Arai, Chiyoda-machi, JP;
Kenji Maeda, Matsuda, JP;
Tsunehiko Tsubone, Hikari, JP;
Hitachi, Ltd., Tokyo, JP;
Abstract
The main purpose of the present invention is to suppress deposition of byproducts on an inner wall of a vacuum chamber during wafer processing using plasma generated by an inductive coupling antenna and an electrostatic capacitive coupling antenna which are connected in series at a connection point. Deposition of byproducts on the inner wall of the vacuum chamber can be suppressed by grounding the connection point of the inductive coupling antenna and the electrostatic capacitive coupling antenna via a variable-impedance load and varying an impedance of the variable-impedance load, thereby controlling a ratio of plasma produced in the chamber by electrostatic capacitive coupling discharge.