The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 29, 2004
Filed:
Mar. 13, 2002
Applicant:
Inventor:
Naho Nishioka, Hyogo, JP;
Assignee:
Renesas Technology Corp., Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/9788 ; H01L 2/976 ;
U.S. Cl.
CPC ...
H01L 2/9788 ; H01L 2/976 ;
Abstract
A nonvolatile semiconductor memory device includes a semiconductor substrate having a main surface and a plurality of transistors formed on the main surface. The transistors each include a gate electrode, a diffusion layer formed adjacent to the gate electrode and contacts communicating with the diffusion layer. The contacts corresponding to the transistors include a contact having a first distance from the gate electrode and a contact having a second distance from the gate electrode that is longer than the first distance.