The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 29, 2004
Filed:
Dec. 23, 2002
Kenji Kawano, Atsugi, JP;
Hiroaki Yoshidaya, Atsugi, JP;
Jun Hiraoka, Atsugi, JP;
Yuichi Sasaki, Atsugi, JP;
Anritsu Corporation, Tokyo, JP;
Abstract
A semiconductor light receiving element has an n electrode, an n-type semiconductor doped layer or a non-doped layer provided above the n electrode, a semiconductor light absorbing layer provided above the n-type semiconductor doped layer or the non-doped layer, a p-type semiconductor doped layer provided above the semiconductor light absorbing layer, and a p electrode provided above the p-type semiconductor doped layer. The semiconductor light absorbing layer has at least two layer portions doped to p-type, and a spacer layer for acceleration which is formed from a semiconductor material sandwiched by the two layer portions and which makes electrons and positive holes generated by incident light being absorbed at the semiconductor light absorbing layer accelerate and run.