The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 29, 2004
Filed:
May. 01, 2003
Applicant:
Inventors:
Assignee:
Sumitomo Electric Industries, Ltd., Osaka, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/358 ;
U.S. Cl.
CPC ...
H01L 2/358 ;
Abstract
Backgate-characteristics determination method and device that make for curtailing the fabrication of semiconductor circuit elements having defective backgate-characteristics. Initially a first C-V curve representing the relation between a voltage applied to the obverse face of a wafer serving as a substrate for semiconductor circuit elements, and its capacitance, is found. Next, a second C-V curve is found through applying a voltage to the reverse face of the wafer . The backgate characteristics for the semiconductor circuit elements are determined based on a voltage-shift amount for the wafer , found from the first C-V curve and the second C-V curve