The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 22, 2004
Filed:
Feb. 26, 2003
Applicant:
Inventor:
Hiroshi Kawaguchi, Toyo, JP;
Assignee:
Sumitomo Eaton Nova Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01J 3/7317 ;
U.S. Cl.
CPC ...
H01J 3/7317 ;
Abstract
In an ion implantation method of the present invention, an ion beam extracted from an ion source is implanted into a wafer by way of a plasma shower in a transportation section on the upstream side of the wafer. The plasma shower comprised of an arc chamber and a shower tube is arranged in a resolving aperture member or in the immediate vicinity of the downstream side.
Quick Actions:
Kawaguchi, Hiroshi. (2004). Ion implantation apparatus equipped with plasma shower and ion implantation method (U.S. Patent No. 6753539). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6753539
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