The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 22, 2004
Filed:
Apr. 28, 2003
Applicant:
Inventor:
Cheng-Shun Chen, Miaoli, TW;
Assignee:
Macronix International Co., Ltd., Hsinchu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/176 ;
U.S. Cl.
CPC ...
H01L 2/176 ;
Abstract
A method of shallow trench isolation fill-in to create the void-free trenches is disclosed. First, a liner oxide layer is formed in the trenches. Next, the silicon substrate is pre-wetted with DI water, and the liner oxide layer is etched by a chemical solution. The chemical solution is an oxide etchant, such as HF solution or BOE (buffered oxide etchant). The etching rate close to an opening of a trench is faster than a bottom of the trench. Finally, the trenches are filled with a HDP oxide layer.