The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 22, 2004
Filed:
Jan. 13, 2001
Applicant:
Inventors:
Hiroaki Tsugane, Sakata, JP;
Hisakatsu Sato, Sakata, JP;
Assignee:
Seiko Epson Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/18242 ; H01L 2/120 ;
U.S. Cl.
CPC ...
H01L 2/18242 ; H01L 2/120 ;
Abstract
Embodiments of the present invention include a method for manufacturing a semiconductor device, in which, when a DRAM and a MOS field effect transistor that becomes a component of a logic circuit are mix-mounted on the same chip, the DRAM and the MOS field effect transistor can be provided with designed performances. After a capacitor of the DRAM is formed, silicide layers and are formed over N type source/drain regions and of MOS field effect transistors and that are located in peripheral circuit region and logic circuit region