The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 22, 2004
Filed:
Mar. 07, 2002
Yasuhiro Ono, Tokyo, JP;
Sota Shinohara, Tokyo, JP;
Elpida Memory, Inc., Tokyo, JP;
Abstract
A method for fabricating a semiconductor device includes the following steps. At first, a Ru or RuO film and a SiO layer are formed over a Si substrate in that order. Then, a resist pattern is formed on the SiO layer and is then provided as a mask to etch the SiO layer to form a contact hole. The Ru or RuO film is exposed at the bottom of the contact hole. Subsequently, a plasma ashing is performed using an ashing gas prepared by mixing O with N where the composition ratio of N is 50% or more at a substrate temperature of 200° C. or more for ashing the resist pattern. Consequently, the present invention allows the ashing of the resist pattern over the Ru or RuO film at a high selectivity to prevent the Ru or RuO film from becoming disappeared.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile