The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 6753127 B1

PDF
Full Text
Expired
Date of Patent:
Jun. 22, 2004

Filed:

Sep. 19, 2002
Applicant:
Inventors:

Eun Sil Han, Daejun, KR;

Bong Seok Moon, Daejun, KR;

Jung Han Shin, Seoul, KR;

Ouck Han, Daejun, KR;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G03F 7/038 ; C08F 4/06 ; C07C 4/9105 ;
U.S. Cl.
CPC ...
G03F 7/038 ; C08F 4/06 ; C07C 4/9105 ;
Abstract

Disclosed is an norbornene-based copolymer for photoresist, a preparation method thereof, and a photoresist composition comprising the same. The copolymer of the present invention exhibits high transparency to light of 193 nm wavelength and an excellent etching resistance, excellent resolution due to the remarkable difference between light-exposed part and light-unexposed part in the dissolving rate and excellent adhesion to the substrate due to very hydrophilic diketone group of its own. As a result, the copolymer of the present invention is very useful as ArF exposure photoresist material in the fabrication of semiconductor devices.


Find Patent Forward Citations

Han, Eun. (2004). Norbornene-based copolymer for photoresist, preparation method thereof, and photoresist composition comprising the same (U.S. Patent No. 6753127). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6753127

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