The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 15, 2004
Filed:
Aug. 26, 2002
Applicant:
Inventors:
Richard C. Foss, Kirkaldy Fife, GB;
Cormac O'Connell, Kanata, CA;
Assignee:
Mosaid Technologies Incorporated, Kanata, CA;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 1/500 ;
U.S. Cl.
CPC ...
G11C 1/500 ;
Abstract
A memory cell comprising an inverting stage, an access transistor coupled between a data line and an input of the inverting stage, the access transistor being responsive to a control signal for selectively coupling the data line and the inverting stage input, a feedback transistor coupled to the inverting stage input and being responsive to an output of the inverting stage for latching the inerting stage in a first logic state and whereby the cell is maintained in a second logic state by a leakage current flowing through the access transistor which is greater than a current flowing through the feedback transistor.